Determination of Energy Band Gap In Semiconductor

Determination of Energy Band Gap In Semiconductor

Categories: Educational Trainers

Object: To draw the characteristics of a P-N junction diode for reverse saturation current and temperature. To determine the energy band gap in a P-N junction diode. Features: The board consist...


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Object:

  • To draw the characteristics of a P-N junction diode for reverse saturation current and temperature.
  • To determine the energy band gap in a P-N junction diode.
Features: The board consists of the following built-in parts : 01. 2V D.C. at 10mA, regulated power supply. 02. Digital microammeter, 3½ digits having range 200mA D.C. 03. Semiconductor diode. 04. Thermometer 0-110 °C. 05. Oven, electrically heated to heat the semiconductor diode. 06. Mains ON/OFF switch and fuse.


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quick overview :

Object:

  • To draw the characteristics of a P-N junction diode for reverse saturation current and temperature.
  • To determine the energy band gap in a P-N junction diode.
Features: The board consists of the following built-in parts : 01. 2V D.C. at 10mA, regulated power supply. 02. Digital microammeter, 3½ digits having range 200mA D.C. 03. Semiconductor diode. 04. Thermometer 0-110 °C. 05. Oven, electrically heated to heat the semiconductor diode. 06. Mains ON/OFF switch and fuse.

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